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2SJ384S PDF预览

2SJ384S

更新时间: 2024-02-01 19:46:43
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
7页 46K
描述

2SJ384S 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
风险等级:5.29Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):15 A
最大漏源导通电阻:0.01 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ384S 数据手册

 浏览型号2SJ384S的Datasheet PDF文件第2页浏览型号2SJ384S的Datasheet PDF文件第3页浏览型号2SJ384S的Datasheet PDF文件第4页浏览型号2SJ384S的Datasheet PDF文件第5页浏览型号2SJ384S的Datasheet PDF文件第6页浏览型号2SJ384S的Datasheet PDF文件第7页 
2SJ384 L , 2SJ384 S  
Silicon P-Channel MOS FET  
Application  
LDPAK  
High speed power switching  
4
4
Features  
1
2
3
• Low on–resistance  
1
2
• High speed switching  
• Low drive current  
2, 4  
3
• 2.5 V gate drive device can be driven from  
3 V source  
• Suitable for Switching regulator, DC – DC  
converter  
1
1. Gate  
2. Drain  
3. Source  
4. Drain  
• Avalanche Ratings  
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
–60  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±20  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
–15  
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
–60  
A
D(pulse)  
———————————————————————————————————————————  
Body–drain diode reverse drain current  
I
–15  
A
DR  
———————————————————————————————————————————  
Avalanche current  
I
***  
–15  
A
AP  
———————————————————————————————————————————  
Avalanche energy  
E
***  
19  
mJ  
AR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
50  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW 10 µs, duty cycle 1 %  
*
** Value at Tc = 25 °C  
*** Value at Tch = 25 °C, Rg 50 Ω  

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