Datasheet > 2SJ387(L)|2SJ387(S)

2SJ387(L)|2SJ387(S)

更新时间： 2022-01-19 02:20:00

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

2SJ387(L)|2SJ387(S) 数据手册

2SJ387(L), 2SJ387(S)

Silicon P-Channel MOS FET

ADE-208-1196 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

•

Low on-resistance

Low drive current

2.5 V Gate drive device can be driven from 3 V Source

Suitable for Switching regulator, DC - DC converter

Outline

DPAK-2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...12

下载PDF

型号	品牌	描述	获取价格	数据表
2SJ387(S)	RENESAS	10A, 20V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3	获取价格
2SJ387(S)-(1)	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA	获取价格
2SJ387(S)-(2)	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA	获取价格
2SJ387(S)-(3)	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA	获取价格
2SJ387(S)TL	HITACHI	暂无描述	获取价格
2SJ387(S)TR	HITACHI	Power Field-Effect Transistor, 10A I(D), 20V, 0.11ohm, 1-Element, P-Channel, Silicon, Meta	获取价格