2SJ280(S)TR

更新时间： 2024-02-25 16:17:49

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日立 - HITACHI		/
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2SJ280(S)TR 数据手册

2SJ280 L , 2SJ280 S

Table 2 Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit Test conditions

———————————————————————————————————————————

Drain to source breakdown

–60

—

= –10 mA, V

= 0

(BR)DSS

voltage

———————————————————————————————————————————

Gate to source breakdown

±20

—

= ±200 µA, V

= 0

(BR)GSS

voltage

———————————————————————————————————————————

Gate to source leak current

—

±10

µA

= ±16 V, V

= 0

GSS

———————————————————————————————————————————

Zero gate voltage drain current

—

–250

µA

= –50 V, V

= 0

DSS

———————————————————————————————————————————

Gate to source cutoff voltage

———————————————————————————————————————————

–1.0

—

–2.25

= –1 mA, V

= –10 V

GS(off)

Static drain to source on state

—

0.033

0.043

Ω

I = –15 A

DS(on)

resistance

= –10 V *

————————————————————————

—

0.045

0.06

Ω

I = –15 A

= –4 V *

———————————————————————————————————————————

Forward transfer admittance

|y |

—

I = –15 A

= –10 V *

———————————————————————————————————————————

Input capacitance

Ciss

—

3300

—

= 10 V

————————————————————————————————

Output capacitance

Coss

—

1500

—

= 0

————————————————————————————————

Reverse transfer capacitance

Crss

—

480

—

f = 1 MHz

———————————————————————————————————————————

Turn–on delay time

—

I = –15 A

d(on)

————————————————————————————————

Rise time

—

170

—

= –10 V

————————————————————————————————

Turn–off delay time

—

500

—

R = 2 Ω

d(off)

————————————————————————————————

Fall time

—

390

—

———————————————————————————————————————————

Body–drain diode forward

—

–1.5

—

I = –30 A, V

= 0

voltage

———————————————————————————————————————————

Body–drain diode reverse

recovery time

—

200

—

= –30 A, V

= 0,

diF / dt = 50 A / µs

———————————————————————————————————————————

* Pulse Test

123 4 5 6 7 8

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与2SJ280(S)TR相关器件

型号	品牌	描述	获取价格	数据表
2SJ280L	HITACHI	SILICON P-CHANNEL MOS FET	获取价格
2SJ280L-E	RENESAS	Pch Single Power MOSFET -60V -30A 43mohm LDPAK(L)	获取价格
2SJ280S	HITACHI	SILICON P-CHANNEL MOS FET	获取价格
2SJ281	SANYO	Very High-Speed Switching Applications	获取价格
2SJ281FA	ETC	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 3A I(D) \| TO-252VAR	获取价格
2SJ282	ETC	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 3A I(D) \| TO-220AB	获取价格

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