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2SJ280(S)TR PDF预览

2SJ280(S)TR

更新时间: 2024-01-27 19:14:12
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
8页 125K
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2SJ280(S)TR 数据手册

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2SJ280 L , 2SJ280 S  
Drain-Source Saturation Voltage  
vs. Gate-Source Voltage  
Static Drain-Source on State  
Resistance vs. Drain Current  
–2.0  
–1.6  
–1.2  
–0.8  
–0.4  
0.5  
0.2  
Pulse Test  
0.1  
ID = –30 A  
VGS= –4 V  
–10 V  
0.05  
–20 A  
–10 A  
0.02  
0.01  
0.005  
0
–2  
–4  
–6  
–8  
–10  
–2  
–5 –10 –20  
–50 –100 –200  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Forward Transfer Admittance  
vs. Drain Current  
Static Drain-Source on State  
Resistance vs. Temperature  
100  
0.1  
0.08  
0.06  
0.04  
0.02  
0
Pulse Test  
VDS= –10 V  
Pulse test  
ID = –30 A  
50  
20  
10  
Tc = 25°C  
–25°C  
VGS= –4 V  
75°C  
–10 A, –20 A  
5
2
1
ID = –30 A  
–10 V  
–10 A, –20 A  
–40  
0
40  
80  
120  
160  
–0.5 –1  
–2  
–5 –10 –20  
–50  
Drain Current ID (A)  
Case Temperature TC (°C)  

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