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2SJ175 PDF预览

2SJ175

更新时间: 2024-02-12 11:16:08
品牌 Logo 应用领域
日立 - HITACHI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 34K
描述
Silicon P-Channel MOS FET

2SJ175 技术参数

是否Rohs认证: 不符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:unknown
风险等级:5.68Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):10 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):25 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

2SJ175 数据手册

 浏览型号2SJ175的Datasheet PDF文件第1页浏览型号2SJ175的Datasheet PDF文件第2页浏览型号2SJ175的Datasheet PDF文件第3页浏览型号2SJ175的Datasheet PDF文件第4页 
2SJ175  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part  
of this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any  
other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any  
intellectual property claims or other problems that may result from applications based on the  
examples described herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third party  
or Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are  
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL  
APPLICATIONS.  
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