Datasheet > 2SJ1315(L)(S).2SK1316(L)(S)

2SJ1315(L)(S).2SK1316(L)(S)

更新时间： 2022-01-19 02:20:00

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2SJ1315(L)(S).2SK1316(L)(S) 数据手册

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2SK1315(L)(S), 2SK1316(L)(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source

breakdown voltage

2SK1315 V_(BR)DSS450

—

I_D= 10 mA, V_GS= 0

2SK1316

500

Gate to source breakdown

voltage

V_(BR)GSS±30

—

I_G= ±100 µA, V_DS= 0

Gate to source leak current

I_GSS

—

±10

250

µA

V_GS= ±25 V, V_DS= 0

V_DS= 360 V, V_GS= 0

V_DS= 400 V, V_GS= 0

I_D= 1 mA, V_DS= 10 V

I_D= 4 A, V_GS= 10 V *¹

Zero gate voltage

drain current

2SK1315 I_DSS

2SK1316

Gate to source cutoff voltage

Static Drain to source 2SK1315 R_DS(on)

on state resistance 2SK1316

V_GS(off)

2.0

—

4.5

—

3.0

0.7

0.8

—

0.55

0.60

7.5

1150

340

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

|yfs|

Ciss

Coss

Crss

t_d(on)

t_r

I_D= 4 A, V_DS= 10 V *¹

V_DS= 10 V, V_GS= 0,

f = 1 MHz

I_D= 4 A, V_GS= 10 V,

R_L= 7.5

Turn-off delay time

Fall time

t_d(off)

t_f

100

Body to drain diode forward

voltage

V_DF

0.9

I_F= 8 A, V_GS= 0

Body to drain diode reverse

recovery time

t_rr

—

350

—

I_F= 8 A, V_GS= 0,

di_F/dt = 100 A/µs

Note: 1. Pulse test

See characteristic curves of 2SK1159, 2SK1160.

1 234 5 6 7 8

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