生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.66 | 配置: | SINGLE |
FET 技术: | JUNCTION | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ144Y | ETC |
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TRANSISTOR | JFET | P-CHANNEL | 1.2MA I(DSS) | SC-70 | |
2SJ144-Y | TOSHIBA |
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Audio Frequency Amplifier Applications | |
2SJ144YTE85L | TOSHIBA |
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TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
2SJ144YTE85R | TOSHIBA |
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TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | |
2SJ145 | ISAHAYA |
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FIELD-EFFECT TRANSISTOR | |
2SJ145_10 | ISAHAYA |
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FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE | |
2SJ145-11-1C | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC | |
2SJ145-11-1E | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC | |
2SJ145-13-1D | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC | |
2SJ145-13-1E | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC |