生命周期: | Obsolete | 零件包装代码: | TO-220IS |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.82 | Is Samacsys: | N |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ148 | TOSHIBA | P CHANNEL MOS TYPE (HGIH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) |
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|
2SJ148_07 | TOSHIBA | High Speed Switching Applications |
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|
2SJ154 | ETC | MOS Field Effect Power Transistors |
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|
2SJ160 | RENESAS | Silicon P Channel MOS FET |
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|
2SJ160 | HITACHI | Silicon P-Channel MOS FET |
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|
2SJ160|2SJ161|2SJ162 | ETC |
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