2SD965B

更新时间： 2024-11-18 03:56:39

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	101K
描述
LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR

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中文翻译

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数据手册

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2SD965B 数据手册

UTC2SD965B

NPN EPITAXIAL SILICON TRANSISTOR

LOW VOLTAGE HIGH CURRENT

NPN TRANSISTOR

FEATURES

* Collector current up to 5A

* 2SD965B : Collector-Emitter voltage up to 30 V

APPLICATIONS

* Audio amplifier

* Flash unit of camera

* Switching circuit

TO-92

1: EMITTER 2: COLLECTOR 3: BASE

*Pb-free plating product number: 2SD965BL

ABSOLUTE MAXIMUM RATINGS

( Ta=25°C )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

V_CBO

V_CEO

V_EBO

Collector-emitter voltage

Emitter-base voltage

Collector dissipation(Ta=25°C)

Collector current

750

°C

T_j

T_STG

150

Junction Temperature

Storage Temperature

-65 ~ +150

ELECTRICAL CHARACTERISTICS

(Ta=25°C,unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

B_VCBO

Ic=100µA,IE=0

Collector-emitter breakdown

Ic=1mA,IB=0

BV_CEO

voltage

Emitter-base breakdown voltage

BV_EBO

I_CBO

I_E=10µA,Ic=0

V_CB=30V,I_E=0

V_EB=7V,Ic=0

Collector cut-off current

Emitter cut-off current

200

I_EBO

h_{FE 1}

h_{FE 2}

h_{FE 3}

V_CE=2V,Ic=1mA

200

150

DC current gain(note)

_CE=2V,Ic=0.5A

_CE=2V,Ic=2A

230

150

800

Collector-emitter saturation voltage V_CE(sat) Ic=3A, IB= 0.1A

Current gain bandwidth product

Output capacitance

MHz

f_T

Cob

V_CE=6V,Ic=50mA

V_CB=20V,I_E=0, f=1MHz

CLASSIFICATION OF hFE2

RANK

RANGE

230-380

340-600

560-800

UTC

UNISONIC TECHNOLOGIES CO. LTD

www.unisonic.com.tw

QW-R201-078,B

12 3

中文翻译

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