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2SD789

更新时间: 2024-11-21 06:19:11
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管
页数 文件大小 规格书
6页 156K
描述
Silicon NPN Epitaxial

2SD789 技术参数

生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.44
最大集电极电流 (IC):1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SD789 数据手册

 浏览型号2SD789的Datasheet PDF文件第2页浏览型号2SD789的Datasheet PDF文件第3页浏览型号2SD789的Datasheet PDF文件第4页浏览型号2SD789的Datasheet PDF文件第5页浏览型号2SD789的Datasheet PDF文件第6页 
2SD789  
Silicon NPN Epitaxial  
REJ03G0772-0300  
(Previous ADE-208-1140A)  
Rev.3.00  
Aug.10.2005  
Application  
Low frequency power amplifier  
Complementary pair with 2SB740  
Outline  
RENESAS Packaode: PRSS0003DC-A  
(Package namMod)  
1. Emitter  
2. Collector  
3. Base  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbo
VCBO  
VCEO  
VEBO  
IC  
Unit  
V
V
V
A
Collector power dissipation  
Junction temperature  
PC  
9  
150  
W
°C  
Tj  
Storage temperature  
Tstg  
–55 to +150  
°C  
Rev.3.00 Aug 10, 2005 page 1 of 5  

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