Datasheet > 2SD669A-C

2SD669A-C

更新时间： 2024-11-13 01:11:55

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	414K
描述
NPN Silicon Plastic-Encapsulate Transistor

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中文翻译

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数据手册

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2SD669A-C 数据手册

2SD669(A)

2SD669(A)-B

2SD669(A)-C

2SD669-D

M C C

Micro Commercial Components

20736 Marilla Street Chatsworth

CA 91311

Phone: (818) 701-4933

Fax: (818) 701-4933

Features

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

NPN Silicon

Plastic-Encapsulate

Transistor

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Capable of 1 Watts of Power Dissipation.

Collector-current 1.5A

•

Collector-base Voltage 180V

Operating and storage junction temperature range: -55^OC to +150^OC

Halogen free available upon request by adding suffix "-HF"

Electrical Characteristics @ 25 C Unless Otherwise Specified

ꢀꢁꢂꢃꢄꢅꢆ

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

(I =10mAdc, I_B=0)

---

2SD669

2SD669A

120

160

Vdc

ꢀ

---

V_(BR)CBO

V_(BR)EBO

Collector-Base Breakdown Voltage

180

Vdc

(I =1mAdc, I_E=0)

ꢀ

Emitter-Base Breakdown Voltage

(I =1mAdc, I_C=0)

5.0

---

Vdc

Collector Cutoff Current

(V_CB=160Vdc, I_E=0)

Emitter Cutoff Current

µAdc

CBO

I_EBO

(V_EB=4Vdc, I =0)

ON CHARACTERISTICS

h_FE-1

DC Current Gain

---

(I =150mAdc, V_CE=5Vdc)

2SD669

2SD669A

320

200

h_FE-2

DC Current Gain

---

Vdc

(I =500mAdc, V_CE=5Vdc)

V_CE(sat)

V_BE

f_T

C_ob

Collector-Emitter Saturation Voltage

1.0

1.5

(I =500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(V_CE=5Vdc, I_C=150mAdc)

PIN 1.

PIN 2.

PIN 3.

EMITTER

COLLECTOR

BASE

Transition Frequency

(V_CE=5Vdc, I_C=150mAdc)

MHz

140(TYP)

14(TYP)

DIMENSIONS

Collector output capacitance

(V_CB=10Vdc, I_E=0,f=1MHz)

ꢀꢁꢂꢃꢄꢅꢆ

ꢇꢀꢁꢆ

ꢇꢇꢆ

ꢈꢀꢇꢆ

ꢇꢉꢊꢆ

ꢇꢀꢁꢆ

7.40

10.60

15.30

3.90

3.00

0.66

1.17

ꢇꢉꢊꢆ

ꢁꢋꢌꢄꢆ

ꢉꢆ

ꢍ

0.291

0.417

0.602

ꢎꢏꢐꢑ4

0.118

0.026

0.046

0.307ꢆ

0.433

0.618

ꢎꢏꢐꢒ1

0.126

0.034

0.054

7.80

11.00

15.70

4.10

3.20

0.86

1.37

ꢂꢆ

ꢈꢆ

ꢄꢆ

ꢓ

CLASSIFICATION OF H

Rank

Range 2SD669

60-120

100-200

160-320

ꢔ

2SD669A

60-120

100-200

ꢕꢆ

0.090TYP

0.098

0.083

0.000

0.043

2.290TYP

ꢖꢆ

0.114

2.50

2.90

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.

0.091

0.012

0.059

2.10

0.00

1.10

2.30

0.30

1.50

0.018

0.024

0.45

0.60

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Revision: B

2013/01/01

中文翻译

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与2SD669A-C相关器件

型号	品牌	获取价格	描述	数据表
2SD669AC(TO-126)	CJ	获取价格	Transistor
2SD669AC(TO-92)	UTC	获取价格	Transistor
2SD669A-C-AA3-K	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669A-C-AA3-R	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669A-C-AA3-T	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669A-C-AB3-K	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669A-C-AB3-R	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669A-C-AB3-T	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669A-C-BP	MCC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
2SD669A-C-BP-HF	MCC	获取价格	Power Bipolar Transistor,

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