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2SD655FTZ-E PDF预览

2SD655FTZ-E

更新时间: 2024-11-25 06:24:35
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管
页数 文件大小 规格书
6页 60K
描述
Silicon NPN Epitaxial

2SD655FTZ-E 技术参数

生命周期:Not Recommended零件包装代码:TO-92
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.57Is Samacsys:N
Base Number Matches:1

2SD655FTZ-E 数据手册

 浏览型号2SD655FTZ-E的Datasheet PDF文件第2页浏览型号2SD655FTZ-E的Datasheet PDF文件第3页浏览型号2SD655FTZ-E的Datasheet PDF文件第4页浏览型号2SD655FTZ-E的Datasheet PDF文件第5页浏览型号2SD655FTZ-E的Datasheet PDF文件第6页 
2SD655  
Silicon NPN Epitaxial  
REJ03G0768-0200  
(Previous ADE-208-1136)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency power amplifier, Muting  
Outline  
RENESAS Package code: PRSS0003DA-A  
(Package name: TO-92 (1))  
1. Emitter  
2. Collector  
3. Base  
3
2
1
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
30  
15  
V
5
0.7  
V
A
Collector peak current  
Collector power dissipation  
Junction temperature  
iC(peak)  
PC  
1.0  
A
500  
mW  
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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