Datasheet > 2SD602A-S

2SD602A-S

更新时间： 2024-01-04 12:07:16

品牌	Logo	应用领域
SECOS		放大器光电二极管晶体管
页数	文件大小	规格书
3页	1183K
描述
NPN Plastic-Encapsulate Transistor

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技术参数
数据手册

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2SD602A-S 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.68	Base Number Matches：	1

2SD602A-S 数据手册

2SD602 / 2SD602A

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min. Typ. Max. Unit

Test Conditions

I_C=10µA, I_E=0

Collector to Base Breakdown

Voltage

2SD602

V_(BR)CBO

2SD602A

Collector to Emitter Breakdown 2SD602

Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10mA, I_B=0

2SD602A

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

I_E=10µA, I_C=0

0.1

340

µA V_CB=20V, I_E=0

µA V_EB=5V, I_C=0

Emitter Cut-Off Current

I_EBO

h_{FE (1)}

V_CE=10V, I_C=150mA

DC Current Gain

h_{FE (2)}

V_CE=10V, I_C=500mA

I_C=300mA, I_B=30mA

Collector-Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

200

0.6

f_T

MHz V_CE=10V, I_C=50mA, f=200MHz

pF V_CB=10V, I_E=0, f=1MHz

Collector Output Capacitance

C_ob

*Pulse test: Pulse width≦350µS, duty cycle≦2.0%

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. B

Page 2 of 3

123

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