Datasheet > 2SD560

2SD560

更新时间： 2024-01-31 12:36:06

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描述
NPN Silicon Power Ttransistors

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中文翻译

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技术参数
数据手册

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2SD560 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD560 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

NPN Silicon Power Ttransistors

2SD560

DESCRIPTION

The 2SD560 is a mold power transistor developed for lowfrequency

power amplifiers and low-speed switching. This transistor is

ideal for direct driving from the IC output of devices such as pulse

motor drivers and relay drivers, and PC terminals.

ABSOLUTE MAXIMUM RATINGS

( Ta = 25 C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

V_CBO

150

V_CEO

V_EBO

I_C

100

7.0

5.0

0.5

Base Current

I_B

Total Dissipation at

P_tot

T_j

^oC

150

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Symbol

I_CBO

Test Conditions

Min.

—

Typ.

—

Max. Unit

V_CB=100V, I_E=0

V_EB=7.0V, I_C=0

1.0

I_EBO

—

V_CEO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Sustaining Voltage

DC Current Gain

I_C=30mA, I_B=0

100

2000

500

—

V_CE=2.0V, I_C=3.0A

V_CE=2.0V, I_C=5.0A

I_C=3.0A,I_B=3.0mA

V_CE=10V,I_C=500mA

15000

—

Collector-Emitter Saturation Voltage

Base Saturation Voltage

1.5

2.0

—

Current Gain Bandwidth Product

4.0

MHz

—

hFE Classification

classification

hFE1

2000~5000

3000~7000

5000~15000

中文翻译

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与2SD560相关器件

型号	品牌	获取价格	描述	数据表
2SD560-AZ	ROCHESTER	获取价格	5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB, MP-25, 3 PIN
2SD560KB	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB
2SD560-KB	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD560KB-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB
2SD560KB-S3-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB
2SD560LB	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB
2SD560-LB	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD560LB-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB
2SD560MB	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB
2SD560-MB	RENESAS	获取价格	5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB, MP-25, 3 PIN