2SD560-LB

更新时间： 2024-02-19 03:21:06

品牌	Logo	应用领域
日电电子 - NEC		晶体开关放大器晶体管功率双极晶体管功率放大器
页数	文件大小	规格书
6页	92K
描述
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MP-25, 3 PIN

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2SD560-LB 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD560-LB 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SD560

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

ORDERING INFORMATION

The 2SD560 is a mold power transistor developed for low-

frequency power amplifiers and low-speed switching. This transistor is

ideal for direct driving from the IC output of devices such as pulse

motor drivers and relay drivers, and PC terminals.

Ordering Name

2SD560

Package

TO-220AB

FEATURES

(TO-220AB)

• C-to-E reverse diode inserted

• Low collector saturation voltage

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Conditions

Ratings

150

100

7.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

V^CEO

V^EBO

5.0

I^C(DC)

PW ≤ 10 ms,

8.0

I^C(pulse)

duty cycle ≤ 50%

Base current (DC)

I^B(DC)

P^T

0.5

T^C= 25°C

T^A= 25°C

Total power dissipation

°C

1.5

Junction temperature

Storage temperature

T^j

150

−55 to +150

T^stg

INTERNAL EQUIVALENT CIRCUIT

1. Base

2. Collector

3. Emitter

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14863EJ3V0DS00 (3rd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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