Datasheet > 2SD414Q-AZ

2SD414Q-AZ

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	134K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

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2SD414Q-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SB548, 549/2SD414, 415

PNP/NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES

PACKAGE DRAWING (UNIT: mm)

• Ideal for audio amplifier drivers with 30 W to 50 W output

• High voltage

• Available for small mount spaces due to small and thin package

• Easy to be attached to radiators

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

2SB548/ 2SB549/ Unit

2SD414

2SD415

−100/120

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

V^CBO

V^CEO

−80/80

−100/100

−5.0/5.0

V^EBO

−0.8/0.8

−1.5/1.5

1.0

I^C(DC)

Collector current

I^C(pulse)*

P^T(Ta = 25°C)

P^T(Tc = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

Electrode Connection

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Symbol

I^CBO

Conditions

V^CB= −80/80 V, I^E= 0

V^EB= −3.0/3.0 V, I^C= 0

V^CE= −5.0/5.0 V, I^C= −2.0/2.0 mA*

V^CE= −5.0/5.0 V, I^C= −200/200 mA*

I^C= −500/500 mA, I^B= −50/50 mA*

V^CE= −5.0/5.0 V, I^C= −100/100 mA

V^CB= −10/10 V, I^E= 0, f = 1.0 MHz

MIN.

TYP.

MAX.

Unit

µA

−1.0/1.0

Collector cutoff current

Emitter cutoff current

DC current gain

I^EBO

h^FE1

DC current gain

h^FE2

320

−0.4/0.3 −2.0/2.0

−0.9/0.9 −1.5/1.5

70/45

Collector saturation voltage

Base saturation voltage

Gain bandwidth product

Collector capacitance

V^CE(sat)

V^BE(sat)

f^T

MHz

C^ob

25/15

Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

h^FE2CLASSIFICATION

Marking

h^FE2

40 to 80

60 to 120

100 to 200

160 to 320

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16141EJ2V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

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