Datasheet > 2SD437

2SD437

更新时间： 2022-12-20 14:19:32

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	115K
描述
Silicon NPN Power Transistors

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2SD437 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD437

DESCRIPTION

·With TO-3 package

·High voltage

·Fast switching speed

APPLICATIONS

·For switching regulator and power

amplifier applications

PINNING(see fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

600

350

UNIT

Open emitter

Open base

Open collector

I_CM

Collector current-peak

Total power dissipation

Junction temperature

Storage temperature

P_T

T_C=25℃

℃

T_j

150

-65~150

T_stg

12 3

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