2SD313 PDF预览

2SD313

更新时间: 2025-09-22 18:53:15
品牌 Logo 应用领域
南晶电子 - DGNJDZ /
页数 文件大小 规格书
3页 1826K
描述
Pcm(mW) : 1.75; Ic(mA) : 3; BVCBO(V) : 60; BVCEO(V) : 60; BVEBO(V) : 5; Min : 40; Max : 320; VCE (sat) (v) : 1; Package Outline : TO-220;

2SD313 数据手册

 浏览型号2SD313的Datasheet PDF文件第2页浏览型号2SD313的Datasheet PDF文件第3页 
DONGGUAN NANJING ELECTRONICS LTD.,  
TO-220-3L Plastic-Encapsulate Transistors  
2SD313 TRANSISTOR (NPN)  
TO-220-3L  
1. BASE  
FEATURES  
2. COLLECTOR  
3. EMITTER  
z
Low Collector-Emitter Saturation Voltage  
Vce(sat)=1V(MAX)@IC=2A,IB=0.2A  
DC Current Gain hFE=40~320@IC=1A  
Complementray to PNP 2SB507  
z
z
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
2SD313ꢀ'ꢁ#ꢂ"ꢁꢃ"ꢄꢅꢁꢃ  
XXXX=Code  
2SD313  
XXXX  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value  
60  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
60  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
3
A
PC  
1.75  
W
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55-150  
1/3  
Dongguan Nanjing Electronics Ltd.  
www.dgnjdz.com  

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