2SD313-F-TA3-T

更新时间： 2024-01-21 15:24:42

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管局域网
页数	文件大小	规格书
1页	54K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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技术参数
数据手册

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2SD313-F-TA3-T 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
Base Number Matches：	1

2SD313-F-TA3-T 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulate Transistors

2SD313 TRANSISTOR (NPN)

TO-220

1. BASE

FEATURES

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM:

1.75

W (Tamb=25℃)

Collector current

I_CM:

1 2 3

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=100µA, I_E=0

Ic=1mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100µA, I_C=0

V_CB=60V, I_E=0

V_CE=60V, I_E=0

V_EB=4V, I_C=0

µA

100

I_CEO

Collector cut-off current

I_EBO

Emitter cut-off current

100

320

h_FE(1)

V_CE=2V, I_C=1A

DC current gain

h_FE(2)

_CE=2V, I_C=0.1A

I_C=2A, I_B=200mA

_CE=2V, I_C=1A

V_CE(sat)

V_BE

Collector-emitter saturation voltage

Base-emitter voltage

1.5

MHz

Transition frequency

f_T

V_CE=5V, I_C=500mA

_CB=10V, I_E=0,f=1MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

Range

40-80

60-120

100-200

160-320

中文翻译

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