Datasheet > 2SD2537_11

2SD2537_11

更新时间： 2022-09-18 11:09:50

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	129K
描述
Medium Power Transistor (25V, 1.2A)

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2SD2537_11 数据手册

Medium Power Transistor (25V, 1.2A)

2SD2537

Features

Dimensions (Unit : mm)

1) High DC current gain.

2SD2537

2) High emitter-base voltage. (V^EBO=12V)

3) Low saturation voltage.

4.5

1.6

1.5

(Max. V^CE(sat)=0.3V at IC/IB=500mA/10mA)

(1)

(2)

(3)

0.4

0.5

3.0

0.4

Absolute maximum ratings (Ta=25°C)

1.5

ROHM : MPT3

EIAJ : SC-62

(1) Base

(2) Collector

(3) Emitter

Parameter

Symbol

Limits

Unit

Collector-base voltage

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

A (DC)

A (Pulse)

1.2

Collector current

∗

0.5

Collector power dissipation

∗

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

∗1 Single pulse Pw=10ms ∗2 When mounted on a 40×40×0.7mm ceramic board.

Packaging specifications and h^FE

Type

2SD2537

MPT3

Package

hFE

Marking

Code

T100

1000

Basic ordering unit (pieces)

Electrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

−

820

−

Typ. Max.

Unit

Conditions

−

=10μA

=1mA

−

=10μA

CB=30V

EB=12V

CBO

−

200

0.3

1.2

1800

−

μA

Emitter cutoff current

EBO

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

VCE(sat)

=500mA/10mA

=0.5A/10mA

=5V/0.5A

∗

VBE(sat)

hFE

−

MHz

CE/I

Transition frequency

CE=10V, I

CB=10V, I

=−50mA, f=100MHz

=0A, f=1MHz

Output capacitance

Cob

−

∗Measured using pulse current.

Electrical characteristics curves

2.0

1.6

1.2

0.8

2000

1000

VCE=5V

Ta=

25°C

2.0μA

1.8μA

1.6μA

Pulsed

4.0mA

4.5mA

5.0mA

500

1.6

1.2

0.8

200

100

1.4μA

1.2μA

1.0μA

0.8μA

0.6μA

0.4μA

0.5mA

0.4

Ta=25°C

0.2μA

0.3

Pulsed

0.2

0.4 0.6 0.8

1.0 1.2 1.4

0.1

0.2

0.4

0.5

0.1

0.2

0.4

0.5

BASE TO EMITTER VOLTAGE : VBE (V)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.3 Ground emitter propagation characteristics

Fig.1 Ground emitter output characteristics(

)

Fig.2 Ground emitter output characteristics (

)

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2011.05 - Rev.D

1/2

12 3

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