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2SD2395/E PDF预览

2SD2395/E

更新时间: 2024-11-18 12:59:39
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
2页 56K
描述
3A, 50V, NPN, Si, POWER TRANSISTOR, TO-220FN, TO-220FN, 3 PIN

2SD2395/E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220FN包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.74外壳连接:ISOLATED
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:25 W认证状态:Not Qualified
表面贴装:NO端子面层:NOT SPECIFIED
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:1 VBase Number Matches:1

2SD2395/E 数据手册

 浏览型号2SD2395/E的Datasheet PDF文件第2页 
2SD2395  
Transistors  
For Power Amplification (50V, 3A)  
2SD2395  
zStructure  
zExternal dimensions (Unit : mm)  
NPN Silicon Epitaxial Planar Transistor  
TO-220FN  
4.5  
2.8  
10.0  
φ3.2  
zFeatures  
1) Low VCE (sat)  
.
2) Wide SOA.  
1.2  
1.3  
0.8  
2.54  
(1)Base  
2.54  
0.75  
2.6  
(2)Collector  
(3)Emitter  
( ) ( ) ( )  
1 2 3  
zApplications  
Relay drive  
zComplements  
PNP  
NPN  
2SD2395  
DC-DC converter  
Stabilized power supply  
2SB1566  
zAbsolute maximum ratings (Ta=25°C)  
zPackaging specifications and hFE  
Package  
Taping  
Parameter  
Symbol  
Limits  
Unit  
Type  
Code  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
60  
V
h
FE  
Basic ordering unit (pieces)  
500  
50  
V
V
2SD2395  
EF  
5
DC  
I
C
3
A(DC)  
Collector current  
Pulse  
I
CP  
4.5  
A(Pulse)1  
W(Ta=25°C)  
W(Tc=25°C)  
°C  
hFE values are classified as follows:  
2
25  
Item  
E
F
Collector power dissipation  
PC  
hFE  
100 to 200 160 to 320  
Junction temperature  
Storage temperature  
1 Pw=100ms, Single pulse  
Tj  
150  
Tstg  
°C  
55 to +150  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min. Typ. Max. Unit  
Conditions  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCEO  
BVCBO  
BVEBO  
50  
60  
5
100  
35  
1.0  
1.0  
1.0  
1.5  
320  
V
V
I
I
I
C
=1mA  
C=50µA  
V
E
=50µA  
CB=60V  
EB=4V  
I
CBO  
µA  
µA  
V
V
V
Emitter cutoff current  
I
EBO  
1  
1  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
DC current gain  
V
CE(sat)  
I
I
C
/I  
/I  
B
=2A/0.2A  
=2A/0.2A  
V
BE(sat)  
V
C
B
hFE  
100  
MHz  
pF  
V
V
V
CE=3V, I  
C
=0.5A  
=0.5A, f=30MHz  
CB=10V , IE=0A , f=1MHz  
1  
Transition frequency  
f
T
CE=5V, IE  
Collector output capacitance  
1 Pulse test  
Cob  
1/1  

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