Datasheet > 2SD2396

2SD2396

更新时间： 2024-11-20 17:15:39

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2SD2396 数据手册

2SD2396

Rev.F Mar.-2016

DATA SHEET

描述 / Descriptions

TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.

特征 / Features

直流电流增益高,饱和压降低,集电极耗散功率大,安全工作区宽。

High DC current gain, low V_CE(sat),large collector power dissipation, wide SOA.

用途 / Applications

用于低频率功率放大。

Low frequency power amplifier.

内部等效电路 / Equivalent Circuit

引脚排列 / Pinning

PIN1：Base

PIN 2：Collector

PIN 3：Emitter

放大及印章代码 / h_FEClassifications & Marking

_FEClassifications

Symbol

h_FERange

400～800

600～1200

1000～2000

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型号	品牌	获取价格	描述	数据表
2SD2396/H	ROHM	获取价格	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220FN, 3 PIN
2SD2396/HK	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2396/JK	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2396C7/H	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2396C7/HJ	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2396C7/HK	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2396C7/J	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2396C7/JK	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2396C7/K	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2396C7H	ROHM	获取价格	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220FN, TO-220FN, 3 PIN