Datasheet > 2SD2275Q

2SD2275Q

更新时间： 2024-11-24 20:26:19

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中文翻译

获取价格

数据手册

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2SD2275Q 数据手册

Power Transistors

2SD2275

Silicon NPN triple diffusion planar type Darlington

For power amplification

Unit: mm

φ 3.3±0.2

5.0±0.3

Complementary to 2SB1502

20.0±0.5

3.0

Features

Optimum for 55W HiFi output

■

●

High foward current transfer ratio h_FE: 5000 to 30000

●

Low collector to emitter saturation voltage V_CE(sat): <2.5V

1.5

2.0±0.3

2.7±0.3

3.0±0.3

Absolute Maximum Ratings (T =25˚C)

■

1.0±0.2

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.6±0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

120

5.45±0.3

10.9±0.5

100

1:Base

2:Collector

3:Emitter

TOP–3L Package

I_C

Collector power T_C=25°C

Internal Connection

P_C

dissipation

Ta=25°C

3.5

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

V_CB= 120V, I_E= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

h_FE1

V_CE= 100V, I_B= 0

V_EB= 5V, I_C= 0

Emitter cutoff current

Collector to emitter voltage

_C= 30mA, I_B= 0

100

2000

5000

V_CE= 5V, I_C= 1A

Forward current transfer ratio

h_FE2

V_CE= 5V, I_C= 4A

30000

2.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 4A, I_B= 4mA

3.0

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 1MHz

MHz

µs

2.5

3.5

1.0

I_C= 4A, I_B1= 4mA, I_B2= –4mA,

V_CC= 50V

µs

^*h_FE2Rank classification

Rank

h_FE2

5000 to 15000 7000 to 21000 8000 to 30000

12 3 4

中文翻译

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与2SD2275Q相关器件

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2SD2276Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR
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2SD2279Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 5A I(C) \| SIP
2SD2279TV2	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon