是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最大集电极电流 (IC): | 5 A |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 4000 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 20 W | 子类别: | Other Transistors |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2161M | NEC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR | |
2SD2161-M | RENESAS |
获取价格 |
5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, ISOLATED TO-220, FULL PACK-3 | |
2SD2161-M | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SD2161M-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB | |
2SD2162 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHIN | |
2SD2162 | RENESAS |
获取价格 |
SILICON POWER TRANSISTOR | |
2SD2162-AZ | NEC |
获取价格 |
暂无描述 | |
2SD2162-AZ | RENESAS |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER | |
2SD2162-K | RENESAS |
获取价格 |
暂无描述 | |
2SD2162K-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,8A I(C),TO-220AB |