2SD2162-AZ

更新时间： 2024-01-21 18:45:27

品牌	Logo	应用领域
日电电子 - NEC		晶体开关放大器晶体管功率双极晶体管功率放大器局域网
页数	文件大小	规格书
6页	113K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2162-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SD2162

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

ORDERING INFORMATION

The 2SD2162 is a Darlington power transistor that can directly drive

from the IC output. This transistor is ideal for motor drivers and

solenoid drivers in such as OA and FA equipment.

Ordering Name

2SD2162

Package

Isolated TO-220

In addition,

a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting cost.

(Isolated TO-220)

FEATURES

• High h^FEdue to Darlington connection

h^FE≥ 2,000 (V^CE= 2.0 V, I^C= 3.0 A)

• Full mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Conditions

Ratings

150

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

V^CEO

100

V^EBO

7.0

+8.0, −5.0

+12, −8.0

I^C(DC)

PW ≤ 10 ms,

I^C(pulse)

duty cycle ≤ 50%

Base current (DC)

I^B(DC)

P^T

0.8

T^C= 25°C

T^A= 25°C

Total power dissipation

°C

2.0

Junction temperature

Storage temperature

T^j

150

−55 to +150

T^stg

INTERNAL EQUIVALENT CIRCUIT

1. Base

2. Collector

3. Emitter

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14865EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

下载PDF

与2SD2162-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SD2162-K	RENESAS	获取价格	暂无描述
2SD2162K-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,8A I(C),TO-220AB
2SD2162-L	NEC	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2162M	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 8A I(C) \| TO-220VAR
2SD2162-M	NEC	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2162M-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,8A I(C),TO-220AB
2SD2163	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER
2SD2163-AZ	NEC	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2163-AZ	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2163J	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 10A I(C) \| TO-220