2SD2162M

更新时间： 2024-01-24 06:55:47

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	113K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 8A I(C) \| TO-220VAR

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中文翻译

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技术参数
数据手册

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2SD2162M 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	8 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	2000	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	25 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SD2162M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SD2162

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

ORDERING INFORMATION

The 2SD2162 is a Darlington power transistor that can directly drive

from the IC output. This transistor is ideal for motor drivers and

solenoid drivers in such as OA and FA equipment.

Ordering Name

2SD2162

Package

Isolated TO-220

In addition,

a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting cost.

(Isolated TO-220)

FEATURES

• High h^FEdue to Darlington connection

h^FE≥ 2,000 (V^CE= 2.0 V, I^C= 3.0 A)

• Full mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Conditions

Ratings

150

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

V^CEO

100

V^EBO

7.0

+8.0, −5.0

+12, −8.0

I^C(DC)

PW ≤ 10 ms,

I^C(pulse)

duty cycle ≤ 50%

Base current (DC)

I^B(DC)

P^T

0.8

T^C= 25°C

T^A= 25°C

Total power dissipation

°C

2.0

Junction temperature

Storage temperature

T^j

150

−55 to +150

T^stg

INTERNAL EQUIVALENT CIRCUIT

1. Base

2. Collector

3. Emitter

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14865EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SD2162M相关器件

型号	品牌	获取价格	描述	数据表
2SD2162-M	NEC	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2162M-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,8A I(C),TO-220AB
2SD2163	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER
2SD2163-AZ	NEC	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2163-AZ	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2163J	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 10A I(C) \| TO-220
2SD2163-J	NEC	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2163-J	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2163-J-AZ	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2163K	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 10A I(C) \| TO-220

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