Datasheet > 2SD2163-K-AZ

2SD2163-K-AZ

更新时间： 2024-02-13 03:12:17

品牌	Logo	应用领域
瑞萨 - RENESAS		局域网开关晶体管
页数	文件大小	规格书
4页	97K
描述
10A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3

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中文翻译

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技术参数
数据手册

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2SD2163-K-AZ 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.22	外壳连接：	ISOLATED
最大集电极电流 (IC)：	10 A	集电极-发射极最大电压：	100 V
配置：	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	最小直流电流增益 (hFE)：	4000
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SD2163-K-AZ 数据手册

DATA SHEET

DARLINGTON POWER TRANSISTOR

2SD2163

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND

LOW-SPEED HIGH-CURRENT SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SD2163 is a mold power transistor developed for low-

speed high-current switching. This transistor is ideal for direct

driving from the IC output of devices such as pulse motor drivers

and relay drivers of PC terminals.

FEATURES

• Mold package that does not require an insulating board or

insulation bushing

• High DC current gain due to Darlington connection

h^FE= 1,000 MIN. (@I^C= 10 A)

• Low collector saturation voltage:

V^CE(sat)= 1.5 V MAX. (@I^C= 10 A)

Electrode Connection

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

150

V^CEO

100

V^EBO

8.0

I^C(DC)

I^C(pulse)*

I^B(DC)

1.0

Total power dissipation

Junction temperature

Storage temperature

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

°C

2.0

150

T^stg

−55 to +150

PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 100 V, I^E= 0

V^CE= 2.0 V, I^C= 10 A

MIN.

TYP.

MAX.

Unit

µA

h^FE**

1,000

6,000

1.1

30,000

1.5

Collector saturation voltage V^CE(sat)** I^C= 10 A, I^B= 25 mA

Base saturation voltage

Turn-on time

V^BE(sat)**

I^C= 10 A, I^B= 25 mA

1.8

2.0

t^on

t^stg

t^f

I^C= 10 A, I^B1= −I^B2= 25 mA

R^L= 5.0 Ω, V^CC≅ 50 V

Refer to the test circuit.

1.0

µs

Storage time

5.0

Fall time

2.0

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

h^FECLASSIFICATION

Marking

h^FE

1,000 to 3,000

2,000 to 5,000

4,000 to 10,000

8,000 to 30,000

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16139EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

中文翻译

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与2SD2163-K-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SD2163L	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 10A I(C) \| TO-220
2SD2163-L	NEC	获取价格	暂无描述
2SD2163-L	RENESAS	获取价格	10A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2163-L-AZ	NEC	获取价格	暂无描述
2SD2163-L-AZ	RENESAS	获取价格	10A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2163M	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 10A I(C) \| TO-220
2SD2163-M	RENESAS	获取价格	10A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2163-M-AZ	RENESAS	获取价格	10A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2164	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHIN
2SD2164-AZ	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3

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