是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 8 A | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 2000 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 25 W |
子类别: | Other Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SD2162-AZ | RENESAS |
功能相似 ![]() |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2162-AZ | NEC |
获取价格 |
暂无描述 |
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2SD2162-AZ | RENESAS |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER |
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2SD2162-K | RENESAS |
获取价格 |
暂无描述 |
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2SD2162K-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,8A I(C),TO-220AB |
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2SD2162-L | NEC |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |
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2SD2162M | NEC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-220VAR |
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2SD2162-M | NEC |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |
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2SD2162M-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,8A I(C),TO-220AB |
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2SD2163 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER |
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2SD2163-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |
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