生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.8 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1921TL3R | ROHM |
获取价格 |
500mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1921TL4 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1921TL4/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1921TL4/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1921TL4/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1921TL4/R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1921TL4P | ROHM |
获取价格 |
500mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1922 | HITACHI |
获取价格 |
Silicon NPN Epitaxial | |
2SD1922 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SD1922RF | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon |