Power Transistors
2SD1742, 2SD1742A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
Unit: mm
7.0±0.3
3.0±0.2
3.5±0.2
Complementary to 2SB1172 and 2SB1172A
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
1.1±0.1
0.85±0.1
0.4±0.1
0.75±0.1
●
Low collector to emitter saturation voltage VCE(sat)
●
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
2.3±0.2
4.6±0.4
Absolute Maximum Ratings (T =25˚C)
■
C
1
2
3
1:Base
2:Collector
3:Emitter
I Type Package
Parameter
Symbol
Ratings
Unit
Collector to
2SD1742
2SD1742A
2SD1742
60
VCBO
V
base voltage
Collector to
80
Unit: mm
7.0±0.3
3.5±0.2
2.0±0.2
3.0±0.2
0 to 0.15
60
VCEO
V
emitter voltage 2SD1742A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
6
V
A
A
5
2.5
IC
3
15
0.75±0.1
0.5 max.
0.9±0.1
Collector power TC=25°C
1.1±0.1
0 to 0.15
PC
W
dissipation
Ta=25°C
1.3
1
2
3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1:Base
2:Collector
3:Emitter
Tstg
–55 to +150
2.3±0.2
4.6±0.4
I Type Package (Y)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICES
Conditions
min
typ
max
200
200
300
300
1
Unit
2SD1742
2SD1742A
2SD1742
2SD1742A
VCE = 60V, VBE = 0
µA
current
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
Collector cutoff
current
ICEO
IEBO
VCEO
µA
mA
V
Emitter cutoff current
Collector to emitter 2SD1742
voltage 2SD1742A
60
80
70
10
IC = 30mA, IB = 0
*
hFE1
VCE = 4V, IC = 1A
250
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
1.8
1.2
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
30
0.5
2.5
0.4
MHz
µs
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
µs
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
70 to 150
120 to 250
1