Datasheet > 2SD1450S

2SD1450S

更新时间： 2024-10-01 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	52K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| SC-72

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中文翻译

获取价格

数据手册

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2SD1450S 数据手册

Transistor

2SD1450

Silicon NPN epitaxial planer type

For low-frequency amplification

Unit: mm

4.0±0.2

Features

Optimum for high-density mounting.

■

●

Allowing supply with the radial taping.

●

Low collector to emitter saturation voltage V_CE(sat)

marking

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.27 1.27

2.54±0.15

0.5

1:Emitter

2:Collector

3:Base

I_C

EIAJ:SC–72

New S Type Package

Collector power dissipation (Ta=25˚C)

Junction temperature

Storage temperature

P_C

300

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CB= 25V, I_E= 0

100

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 2V, I_C= 0.5A^*2

V_CE= 2V, I_C= 1A^*2

200

800

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 500mA, I_B= 20mA^*2

0.13

0.4

1.2

Transition frequency

Collector output capacitance

ON resistanse

f_T

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

200

MHz

C_ob

R_on

0.6

Ω

^*2Pulse measurement

Rank classification

Measurement circuit

FE1

1kΩ

Rank

h_FE1

I_B=1mA

200 ~ 350

300 ~ 500

400 ~ 800

f=1kHz

V=0.3V

V_B

V_A

V_V

V_B

R_on=

✕1000(Ω)

V_A–V_B

12 3

中文翻译

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