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2SD1457A PDF预览

2SD1457A

更新时间: 2024-01-26 17:58:09
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 120K
描述
Silicon NPN Power Transistors

2SD1457A 技术参数

生命周期:Obsolete零件包装代码:TO-3-3L
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):6 A
集电极-发射极最大电压:150 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):700JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
Base Number Matches:1

2SD1457A 数据手册

 浏览型号2SD1457A的Datasheet PDF文件第2页浏览型号2SD1457A的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1457 2SD1457A  
DESCRIPTION  
·With TO-3PFa package  
·High DC current gain  
·DARLINGTON  
·High VCBO  
APPLICATIONS  
·For power amplification  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PFa) and symbol  
3
Emitter  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
Open emitter  
MAX  
200  
150  
200  
5
UNIT  
VCBO  
Collector-base voltage  
V
2SD1457  
VCEO  
Collector-emitter voltage  
Open base  
V
2SD1457A  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
6
ICM  
Collector current-peak  
10  
TC=25ꢀ  
Ta=25ꢀ  
60  
PC  
Collector power dissipation  
W
3.0  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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