Datasheet > 2SD1451

2SD1451

更新时间： 2022-12-26 14:37:40

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	120K
描述
Silicon NPN Power Transistors

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2SD1451 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1456

DESCRIPTION

·With TO-3PN package

·High voltage,high speed

·Built-in damper diode

APPLICATIONS

·For TV horizontal deflection output

applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_EBO

I_C

PARAMETER

Collector-base voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

1500

UNIT

Open collector

Collector current (DC)

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_C=25℃

T_j

150

℃

T_stg

-45~150

12 3

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