Datasheet > 2SD1383K-2

2SD1383K-2

更新时间： 2024-11-11 06:25:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体放大器晶体管
页数	文件大小	规格书
3页	79K
描述
High-gain Amplifier Transistor (32V , 0.3A)

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数据手册

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2SD1383K-2 数据手册

2SD1383K

Transistors

High-gain Amplifier Transistor (32V , 0.3A)

2SD1383K

zDimensions (Unit : mm)

zFeatures

1) Darlington connection for high DC current gain.

2) Built-in 4kΩ resistor between base and emitter.

3) Complements the 2SB852K.

2SD1383K

zPackaging specifications

Type

2SD1383K

Package

SMT3

hFE

Marking

Code

∗

(1)Emitter

(2)Base

T146

Each lead has same dimensions

Basic ordering unit (pieces)

3000

(3)Collector

Denotes hFE

∗

zCircuit diagram

RBE 4kΩ

E : Emitter

B : Base

C : Collector

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

0.3

Unit

VCBO

∗1

CES

EBO

A (DC)

A (Pulse) ∗2

Collector current

1.5

Collector power dissipation

Junction temperature

Storage temperature

0.2

°C

Tstg

150

−55 to +150

∗1 RBE=0Ω

∗2 Single pulse Pw=10ms

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

−

250

Max.

Unit

Conditions

BV^CBO

BV^CES

BV^EBO

−

=100µA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

= −1mA , RBE=0Ω

=100µA

CB=24V

EB=4.5V

CE=5V, I

CBO

EBO

CE(sat)

−

µA

−

Emitter cutoff current

=0.1A

=0.4mA

= −10mA, f=100MHz

CB=10V, I =0A, f=1MHz

DC current transfer ratio

5000

−

1.5

−

=200mA, I

∗

Collector-emitter saturation voltage

Transition frequency

MHz

CE=5V, I

Cob

−

Output capacitance

∗

1 Measured using pulse current.

2 Transition frequency of the device.

∗

Rev.C

1/2

12 3

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