生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.77 |
最大集电极电流 (IC): | 0.02 A | 基于收集器的最大容量: | 2 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 470 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC763-T11-C | MITSUBISHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC763-T11-D | MITSUBISHI |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC780AGTM | TOSHIBA |
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TRANSISTOR,BJT,NPN,150V V(BR)CEO,30MA I(C),TO-92 | |
2SC780ATM | TOSHIBA |
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TRANSISTOR,BJT,NPN,150V V(BR)CEO,30MA I(C),TO-92 | |
2SC781 | ETC |
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NPN SILICON EPITAXIAL TRANSISTOR | |
2SC789 | JMNIC |
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Silicon NPN Power Transistors | |
2SC789 | ISC |
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Silicon NPN Power Transistors | |
2SC789 | ONSEMI |
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TRANSISTOR TRANSISTOR,BJT,NPN,60V V(BR)CEO,4A I(C),TO-220, BIP General Purpose Power | |
2SC789 | SAVANTIC |
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Silicon NPN Power Transistors | |
2SC789_15 | JMNIC |
获取价格 |
Silicon NPN Power Transistors |