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2SC828 PDF预览

2SC828

更新时间: 2024-11-20 14:53:23
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
1页 41K
描述
小信号晶体管

2SC828 数据手册

  
2SC828 / 828A  
NPN Silicon Epitaxial Planar Transistor  
for switching and AF amplifier applications.  
These transistors are subdivided into three groups  
Q, R and S according to their DC current gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
VCBO  
Value  
Unit  
V
Collector Base Voltage  
2SC828  
2SC828A  
30  
45  
Collector Emitter Voltage  
2SC828  
2SC828A  
25  
45  
V
VCEO  
Emitter Base Voltage  
Collector Current  
VEBO  
IC  
7
50  
V
mA  
mA  
mW  
Peak Collector Current  
Power Dissipation  
ICM  
Ptot  
Tj  
100  
400  
O
C
Junction Temperature  
Storage Temperature Range  
150  
O
C
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 5 V, IC = 2 mA  
Current Gain Group  
Q
R
S
hFE  
hFE  
hFE  
130  
180  
260  
-
-
-
280  
360  
520  
-
-
-
Collector Base Breakdown Voltage  
at IC = 10 µA  
2SC828  
2SC828A  
30  
45  
-
-
-
-
VCBO  
VCEO  
VEBO  
VBE  
fT  
V
V
Collector Emitter Breakdown Voltage  
at IC = 2 mA  
2SC828  
2SC828A  
25  
45  
-
-
-
-
Emitter Base Breakdown Voltage  
at IC = 10 µA  
7
-
-
-
-
0.8  
-
V
Base Emitter Voltage  
at IC = 10 mA, VCE = 5 V  
V
Gain Bandwidth Product  
at IC = 2 mA, VCE = 10 V  
-
220  
MHz  
®
Dated18/08/2016 Rev02  

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