Datasheet > 2SC5618-T3EB

2SC5618-T3EB

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
22页	97K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3

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2SC5618-T3EB 数据手册

2SC5618

ELECTRICAL CHARACTERISTICS (T^A= +25°C)

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

I^CBO

I^EBO

V^CB= 5 V, I^E= 0 mA

V^EB= 1 V, I^C= 0 mA

= 2 V, I = 20 mA

–

100

130

–

FE ^{Note 1}

RF Characteristics

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure (1)

f^T

V^CE= 2 V, I^C= 20 mA, f = 2 GHz

V^CE= 1 V, I^C= 10 mA, f = 2 GHz

9.0

7.0

8.5

6.0

–

14.0

12.0

10.0

9.0

–

GHz

21e

= 2 V, I = 20 mA, f = 2 GHz

–

21e

= 1 V, I = 10 mA, f = 2 GHz

–

V^CE= 2 V, I^C= 3 mA, f = 2 GHz,

Z^S= Z^opt

1.4

2.0

V^CE= 1 V, I^C= 3 mA, f = 2 GHz,

Z^S= Z^opt

Noise Figure (2)

–

1.5

0.4

2.0

0.8

re ^{Note 2}

Reverse Transfer Capacitance

= 2 V, I = 0 mA, f = 1 MHz

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

h^FECLASSIFICATION

Rank

Marking

h^FEValue

70 to 100

90 to 130

Data Sheet PU10083EJ02V0DS

123 4 5 6 7...22

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