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2SC5633 PDF预览

2SC5633

更新时间: 2024-02-28 23:05:49
品牌 Logo 应用领域
谏早电子 - ISAHAYA 晶体晶体管
页数 文件大小 规格书
2页 49K
描述
SMALL-SIGNAL TRANSISTOR

2SC5633 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SC5633 数据手册

 浏览型号2SC5633的Datasheet PDF文件第2页 
SMALL-SIGNAL TRANSISTOR〉  
PRELIMINARY  
2SC 5633  
Notics:This is not a final specification.  
FOR HIGH FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
Some parametric limits are subject to change. ꢀ  
DESCRIPTION  
OUTLINE DRAWING  
Unit  
m  
2SC5633isasuperminipackageresinsealed  
silicon NPN epitaxial transistor,  
It is designed for high voltage application.  
hFE rank  
4.4±0.1  
1.6±0.1  
Lot No.  
φ1  
2.5±0.1  
0.8MIN  
FEATURE  
●Small collector to emitter saturation voltage.  
VCE(sat)=0.5V max  
1.5 0.1  
±
1.5 0.1  
±
Abbreviation  
For kind  
Super mini package for easy mounting  
0.4 00.7  
±
0.5 00.7  
±
0.4 00.7  
±
01. MAX  
APPLICATION  
For Hybrid IC, DC-DC converter  
JEITASC-62  
TERMINAL CONNECTER  
EMITTER  
MAXIMUM RATINGSTa=25℃)  
Symbol  
VCBO  
VCEO  
VEBO  
IO  
Parameter  
Ratings  
300  
Unit  
V
COLLECTOR  
BASE  
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
300  
V
7
V
100  
mA  
mW  
Pc  
Collector dissipation  
Junction temperature  
Storage temperature  
500  
Tj  
+150  
-55~+150  
Tstg  
ELECTRICAL CHARACTERISTICSTa=25)  
Limits  
Parameter  
Symbol  
Test conditions  
Unit  
ꢀV  
Min  
300  
7
Typ  
-
Max  
-
C to B break down voltage  
E to Bꢀbreakdownvoltage  
C to E break down voltage  
Collector cut off current  
Emitter cut off current  
V(BR)CBO  
V(BR)EBO  
V(BR)CEO  
ICBO  
IC=50μA ,IE=0  
IE=50μA ,IC=0  
IC=1mA ,R BE=∞  
-
-
ꢀV  
ꢀV  
300  
-
-
-
V CB=-300V, IE=0mA  
V EB=5V, IC=0mA  
-
0.5  
0.5  
305  
0.5  
-
μA  
IEBO  
-
-
μA  
DC forward current gain  
C to E SaturationVlotage  
Gain bandwidth product  
Collector output capacitance  
hFE  
V CE=10V, IC=10mA  
ꢀ60  
-
-
VCE(sat) IC=100mA ,I =10mA  
B
-
V
fT  
V CE=6V, IE=-10mA  
-
40  
3.0  
MHz  
pF  
Cob  
V CB=6V, IE=0,f=1MHz  
-
-
ISAHAYAELECTRONICSCORPORATION  

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