〈SMALL-SIGNAL TRANSISTOR〉
PRELIMINARY
2SC 5633
Notics:This is not a final specification.
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
Some parametric limits are subject to change. ꢀ
DESCRIPTION
OUTLINE DRAWING
Unit
:mm
ꢀ2SC5633isasuperminipackageresinsealed
silicon NPN epitaxial transistor,
It is designed for high voltage application.
ꢀ
hFE rank
4.4±0.1
1.6±0.1
Lot No.
φ1
2.5±0.1
0.8MIN
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.5V max
1.5 0.1
±
1.5 0.1
±
Abbreviation
For kind
●Super mini package for easy mounting
0.4 00.7
±
0.5 00.7
±
0.4 00.7
±
01. MAX
APPLICATION
For Hybrid IC, DC-DC converter
JEITA:SC-62
TERMINAL CONNECTER
①:EMITTER
MAXIMUM RATINGS(Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IO
Parameter
Ratings
300
Unit
V
②:COLLECTOR
③:BASE
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
300
V
7
V
100
mA
mW
℃
℃
Pc
Collector dissipation
Junction temperature
Storage temperature
500
Tj
+150
-55~+150
Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
Symbol
Test conditions
Unit
ꢀV
Min
300
7
Typ
-
Max
-
C to B break down voltage
E to Bꢀbreakdownvoltage
C to E break down voltage
Collector cut off current
Emitter cut off current
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IC=50μA ,IE=0
IE=50μA ,IC=0
IC=1mA ,R BE=∞
-
-
ꢀV
ꢀV
300
-
-
-
V CB=-300V, IE=0mA
V EB=5V, IC=0mA
-
0.5
0.5
305
0.5
-
μA
IEBO
-
-
μA
DC forward current gain
C to E SaturationVlotage
Gain bandwidth product
Collector output capacitance
hFE
V CE=10V, IC=10mA
ꢀ60
-
-
VCE(sat) IC=100mA ,I =10mA
B
-
V
fT
V CE=6V, IE=-10mA
-
40
3.0
MHz
pF
Cob
V CB=6V, IE=0,f=1MHz
-
-
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