Datasheet > 2SC5618-T3EB

2SC5618-T3EB

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
22页	97K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-3

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2SC5618-T3EB 数据手册

2SC5618

TYPICAL CHARACTERISTICS (Unless otherwise specified, T^A= +25°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

300

250

200

150

0.6

f = 1 MHz

Mounted on Glass Epoxy PCB

(1.08 cm²× 1.0 mm (t) )

0.5

0.4

0.3

0.2

0.1

100

125

(˚C)

150

Ambient Temperature T

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

100

CE = 1 V

CE = 2 V

0.1

0.01

0.001

0.01

0.001

0.0001

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

I : 50 A step

500

400 µA

300

200

100

= 50

Collector to Emitter Voltage VCE (V)

Data Sheet PU10083EJ02V0DS

1 234 5 6 7...22

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与2SC5618-T3EB相关器件

型号	品牌	获取价格	描述	数据表
2SC5618-T3EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS
2SC5618-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS
2SC5618-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS
2SC5619	ISAHAYA	获取价格	SMALL-SIGNAL TRANSISTOR
2SC5619_13	ISAHAYA	获取价格	FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5620	ISAHAYA	获取价格	SMALL-SIGNAL TRANSISTOR
2SC5621	ISAHAYA	获取价格	SMALL-SIGNAL TRANSISTOR
2SC5621_13	ISAHAYA	获取价格	FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5622	PANASONIC	获取价格	Silicon NPN triple diffusion mesa type(For horizontal deflection output)
2SC5623	RENESAS	获取价格	Silicon NPN Epitaxial High Frequency Low Noise Amplifier