Datasheet > 2SC5634

2SC5634

更新时间： 2024-01-28 06:15:21

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	95K
描述
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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技术参数
数据手册

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2SC5634 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC5634 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SC5634

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

Mitsubishi 2SC5634 is a super mini package resin sealed

silicon NPN epitaxial transistor.It is designed for high

frequency application.

Unit:mm

2.5

0.5

1.5

FEATURE

・High gain bandwidth product.

fT=8.0GHz

・High gain,low noise.

・Can operate at low voltage.

・Super mini package for easy mounting.

APPLICATION

For TV tuners,high frequency amplifier,celluar phone

system.

TERMINAL CONNECTOR

: BASE

: EMITTER

: COLLECTOR

JEITA:SC-59

MAXIMUM RATINGS (Ta=25℃)

Ratings

Parameter

Symbol

Unit

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

VCBO

VCEO

VEBO

I C

1.5

℃

150

Collector dissipation

+125

-55~+125

Junction temperature

Storage temprature

Tstg

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Limits

Typ

Symbol

Parameter

Test conditions

Unit

Max

1.0

Min

μA

I CBO

Collector cut off current

Emitter cut off current

DC forward current gain

Gain bandwidth product

Collector output capacitance

Insertion power gain

VCB=10V, I E=0mA

VEB=1V, IC=0mA

I EBO

hFE

VCE=5V, I C=10mA

250

5.0

8.0

GHz

f T

VCE=5V, I E=10mA

VCB=5V, I E=0mA, f =1MHz

VCE=5V, I C=10mA, f =1GHz

VCE=5V, I C=5mA, f =1GHz

Cob

｜S21｜²

1.0

12.0

1.4

9.0

Noise figure

12 3 4

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