Datasheet > 2SC5633_09

2SC5633_09

更新时间： 2022-05-21 05:53:10

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
2页	133K
描述
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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2SC5633_09 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SC5633

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SC5633 is a super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for high voltage application.

4.6 MAX

1.6

1.5

0.53

MAX

FEATURE

0.4

●Low collector to emitter saturation voltage.

0.48 MAX

MARKING

1.5

VCE(sat)=0.5V max

3.0

●Super mini package for easy mounting

TERMINAL CONNECTER

Ｅ: EMITTER

APPLICATION

For Hybrid IC, DC-DC converter

Ｃ: COLLECTOR

Ｂ: BASE

EIAJ : SC-62

JEDEC :

Note)

The dimension without tolerance represent central value.

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

300

Unit

MARKING

TYPE NAME

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

300

ＡＪ

Ｑ

100

℃

P_c

Collector dissipation

Junction temperature

Storage temperature

500

T_j

＋150

-55～＋150

T_stg

LOT No.

ｈ_ＦＥITEM

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

300

Typ

Max

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

V(BR)CBO

I _C=50μA ,I _E=0

V(BR) EBO I _E=50μA ,I _C=0

V(BR)CEO

ICBO

I _C=1mA ,R _BE=∞

V _CB=300V, I _E=0mA

V _EB=5V, I _C=0mA

300

0.5

305

0.5

μA

IEBO

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

hFE

_CE=10V, I _C=10mA

VCE(sat) I _C=100mA ,I_B=10mA

_CE=6V, I _E=-10mA

3.0

MHz

Cob

V _CB=6V, I _E=0,f=1MHz

ISAHAYA ELECTRONICS CORPORATION

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