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2SC5628XZ-TL-E PDF预览

2SC5628XZ-TL-E

更新时间: 2024-09-23 07:31:15
品牌 Logo 应用领域
瑞萨 - RENESAS 振荡器晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
10页 212K
描述
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

2SC5628XZ-TL-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-89包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78最大集电极电流 (IC):0.05 A
基于收集器的最大容量:0.85 pF集电极-发射极最大电压:8 V
配置:SINGLE最小直流电流增益 (hFE):80
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.08 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):9000 MHz
Base Number Matches:1

2SC5628XZ-TL-E 数据手册

 浏览型号2SC5628XZ-TL-E的Datasheet PDF文件第2页浏览型号2SC5628XZ-TL-E的Datasheet PDF文件第3页浏览型号2SC5628XZ-TL-E的Datasheet PDF文件第4页浏览型号2SC5628XZ-TL-E的Datasheet PDF文件第5页浏览型号2SC5628XZ-TL-E的Datasheet PDF文件第6页浏览型号2SC5628XZ-TL-E的Datasheet PDF文件第7页 
2SC5628  
Silicon NPN Epitaxial  
High Frequency Amplifier / Oscillator  
REJ03G0750-0300  
(Previous ADE-208-979A)  
Rev.3.00  
Aug.10.2005  
Features  
Super compact package;  
(1.4 × 0.8 × 0.59mm)  
High power gain and low noise figure;  
(PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)  
Outline  
RENESAS Package code: PUSF0003ZA-A  
(Package name: MFPAK R  
)
3
. Emitter  
2. Base  
3. Collector  
Note: Marking is “XZ-”.  
trademark of Renesas Technology Corp.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter volta
Emitter to base volta
Collector current  
ol  
CBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
15  
8
V
1.5  
50  
V
mA  
mW  
°C  
°C  
Collector power dissipatio
Junction temperature  
Pc  
80  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
Rev.3.00 Aug 10, 2005 page 1 of 9  

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