Datasheet > 2SC5509(NE663M04)

2SC5509(NE663M04)

更新时间： 2024-09-27 23:20:23

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其他 - ETC		/
页数	文件大小	规格书
15页	82K
描述
Discrete

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2SC5509(NE663M04) 数据手册

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DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5509

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

FEATURES

•

Ideal for medium output power amplification

NF = 1.2 dB TYP., G^a= 12 dB TYP. @ V^CE= 2 V, I^C= 10 mA, f = 2 GHz

Maximum available power gain: MAG = 14 dB TYP. @ V^CE= 2 V, I^C= 50 mA, f = 2 GHz

f^T= 25 GHz technology adopted

Flat-lead 4-pin thin-type super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5509

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

2SC5509-T2

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

1.5

100

°C

tot ^Note

190

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Free Air

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10009EJ01V0DS (1st edition)

Date Published October 2001 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7...15

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与2SC5509(NE663M04)相关器件

型号	品牌	获取价格	描述	数据表
2SC5509-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509-A-FB	RENESAS	获取价格	暂无描述
2SC5509-A-YFB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5509-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI
2SC5509-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI
2SC5509-T2	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR
2SC5509-T2-A	RENESAS	获取价格	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
2SC5509-T2-A-FB	RENESAS	获取价格	暂无描述
2SC5509-T2FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINI