2SC5345SF

更新时间： 2024-02-05 14:46:36

品牌	Logo	应用领域
可天士 - KODENSHI		射频放大器
页数	文件大小	规格书
5页	309K
描述
RF amplifier

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技术参数
数据手册

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2SC5345SF 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.68

2SC5345SF 数据手册

2SC5345SF

NPN Silicon Transistor

Description

• RF amplifier

PIN Connection

Features

• High current transition frequency

f_T=550MHz(Typ.), [V_CE=6V, I_E=-1mA]

• Low output capacitance :

C_ob=1.4pF(Typ.) [V_CB=6V, I_E=0]

• Low base time constant and high gain

• Excellent noise response

SOT-23F

Ordering Information

Type NO.

Marking

Z □ □

Package Code

2SC5345SF

SOT-23F

① ②

③

① Device Code ② hFE Rank ③ Year&Week Code

Absolute maximum ratings

Characteristic

Ta=25°C

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

°C

Collector dissipation

P_C

150

-55~150

Junction temperature

Storage temperature range

T_j

T_stg

°C

Electrical Characteristics

Characteristic

Ta=25°C

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

I_C=10μA, I_E=0

I_C=5mA, I_B=0

I_E=10μA, I_C=0

V_CB=30V, I_E=0

0.5

240

0.3

μA

Emitter cut-off current

I_EBO

V_EB=4V, I_C=0

DC current gain

h_FE

V_CE=6V, I_C=1mA

I_C=10mA, I_B=1mA

V_CE=6V, I_E=-1mA

V_CB=6V, I_E=0, f=1MHz

Collector-Emitter saturation voltage

Transistor frequency

V_CE(sat)

f_T

550

1.4

MHz

Collector output capacitance

C_ob

* : h_FErank / R : 40~80, O : 70~140, Y : 120~240

KSD-T5C070-000

12 3 4 5

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