2SC5345UF
NPN Silicon Transistor
Description
• RF amplifier
PIN Connection
Features
3
• High current transition frequency
fT=550MHz(Typ.), [VCE=6V, IE=-1mA]
• Low output capacitance :
1
2
Cob=1.4pF(Typ.) [VCB=6V, IE=0]
• Low base time constant and high gain
• Excellent noise response
SOT-323F
Ordering Information
Type NO.
Marking
Package Code
E
2SC5345UF
SOT-323F
① ② ③
①Device Code ②hFE Rank ③Year&Week Code
Absolute maximum ratings
Characteristic
Ta=25°C
Symbol
VCBO
VCEO
VEBO
IC
Ratings
30
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
V
V
20
4
V
Collector current
20
mA
mW
°C
Collector dissipation
PC
150
Junction temperature
Storage temperature range
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
Ta=25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
IC=10μA, IE=0
30
20
4
-
-
-
V
V
IC=5mA, IB=0
-
IE=10μA, IC=0
-
-
-
V
VCB=30V, IE=0
-
0.5
0.5
240
0.3
-
μA
μA
-
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
*
DC current gain
hFE
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V, IE=-1mA
VCB=6V, IE=0, f=1MHz
40
-
-
Collector-Emitter saturation voltage
Transition frequency
VCE(sat)
fT
-
V
-
550
1.4
MHz
pF
Collector output capacitance
Cob
-
-
* : hFE rank / R : 40~80, O : 70~140, Y : 120~240
KSD-T5D034-000
1