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2SC5233-A(TE85L) PDF预览

2SC5233-A(TE85L)

更新时间: 2024-11-12 14:46:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 226K
描述
2SC5233-A(TE85L)

2SC5233-A(TE85L) 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

2SC5233-A(TE85L) 数据手册

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2SC5233  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC5233  
General Purpose Amplifier Applications  
Unit: mm  
Switching and Muting Switch Application  
Low saturation voltage: V  
(1) = 15 mV (typ.)  
CE (sat)  
@I = 10 mA/I = 0.5 mA  
C
B
Large collector current: I = 500 mA (max)  
C
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
15  
12  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
500  
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
55~125  
C
JEDEC  
JEITA  
T
j
SC-70  
2-2E1A  
T
stg  
TOSHIBA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  

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