2SC4900

更新时间： 2024-09-13 22:52:43

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2SC4900 数据手册

2SC4900

Silicon NPN Epitaxial

Application

VHF / UHF wide band amplifier

Features

•

High gain bandwidth product

f_T= 9 GHz Typ

High gain, low noise figure

PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz

Outline

MPAK-4

1. Collector

2. Emitter

3. Base

4. Emitter

12 3 4 5 6 7 8

中文翻译

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型号	品牌	获取价格	描述	数据表
2SC4900YJ-TL	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4900YJ-TR	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4900YJ-UL	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4900YJ-UR	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4901	HITACHI	获取价格	Silicon NPN Epitaxial
2SC4901	RENESAS	获取价格	Silicon NPN Epitaxial
2SC4901	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4901A	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4901B	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4901C	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR