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2SC4901 PDF预览

2SC4901

更新时间: 2024-11-25 02:57:47
品牌 Logo 应用领域
时科 - SHIKUES /
页数 文件大小 规格书
4页 629K
描述
NPN SILICON RF TRANSISTOR

2SC4901 数据手册

 浏览型号2SC4901的Datasheet PDF文件第2页浏览型号2SC4901的Datasheet PDF文件第3页浏览型号2SC4901的Datasheet PDF文件第4页 
2SC4901  
NPN SILICON RF TRANSISTOR  
3
·Ultra high frequency low noise transistor  
·Silicon epitaxial bipolar process.  
·High power gain, low noise figure,  
·SOT-323 chip package, mainly used in VHF, UHF  
·high frequency wideband low noise amplifier.  
2
1
1Base 2Emitter 3Collector  
SOT-323  
Feature  
High gain:S21e2 TYP. Value is 13.5dB  
@ VCE=5VIC=20mAf=0.9GHz  
Low noise: NF  
fT (TYP.) :  
TYP. Value is 1.6dB @ VCE=5VIC=5mAf=0.9GHz  
TYP. Value is 9GHz @ VCE=5VIC=20mAf=0.9GHz  
Absolute Maximum Ratings TA=25℃ Unless Otherwise noted  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector current  
SYMBLE  
VCBO  
VCEO  
VEBO  
IC  
MAXIMUM VALUE  
UNIT  
V
15  
9
V
1.5  
50  
V
mA  
mW  
Collector Power Dissipation  
Junction Temperature  
PD  
100  
Tj  
150  
Storage Temperature  
Tstg  
-65 ~ +150 ℃  
Tstg  
hFE Classification  
A
B
C
YK-  
D
E
Classification  
Marking  
hFE  
60-100  
90-140  
130-180  
170-250  
250-300  
REV.08  
1 of 4  

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