Datasheet > 2SC4901E

2SC4901E

更新时间： 2024-09-16 02:50:27

品牌	Logo	应用领域
时科 - SHIKUES		/
页数	文件大小	规格书
4页	629K
描述
NPN SILICON RF TRANSISTOR

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中文翻译

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数据手册

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2SC4901E 数据手册

2SC4901

NPN SILICON RF TRANSISTOR

·Ultra high frequency low noise transistor

·Silicon epitaxial bipolar process.

·High power gain, low noise figure,

·SOT-323 chip package, mainly used in VHF, UHF

·high frequency wideband low noise amplifier.

1：Base 2：Emitter 3：Collector

SOT-323

Feature

High gain:︱S²¹e︱²TYP. Value is 13.5dB

@ VCE=5V，IC=20mA，f=0.9GHz

Low noise: NF

f^T(TYP.) ^:

TYP. Value is 1.6dB @ VCE=5V，IC=5mA， f=0.9GHz

TYP. Value is 9GHz @ VCE=5V，IC=20mA，f=0.9GHz

Absolute Maximum Ratings T^A=25℃ Unless Otherwise noted

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector current

SYMBLE

VCBO

VCEO

VEBO

MAXIMUM VALUE

UNIT

1.5

℃

Collector Power Dissipation

Junction Temperature

100

150

Storage Temperature

Tstg

-65 ~ +150 ℃

Tstg

hFE Classification

YK-

Classification

Marking

hFE

60-100

90-140

130-180

170-250

250-300

REV.08

1 of 4

12 3 4

中文翻译

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