2SC4807

更新时间： 2024-09-24 22:52:43

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2SC4807 数据手册

2SC4807

Silicon NPN Epitaxial

Application

VHF / UHF wide band amplifier

Features

•

High gain bandwidth product

f_T= 4.4 GHz Typ

High output power

1 dB Power compression point Pcp = 24 dBm Typ at V_CE= 5V , I_C= 100 mA , f = 900 MHz

Outline

UPAK

1. Base

2. Collector

3. Emitter

4. Collector (Flange)

12 3 4 5 6 7 8

中文翻译

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型号	品牌	获取价格	描述	数据表
2SC4807ER	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4807ERTL	HITACHI	获取价格	暂无描述
2SC4807ERTR	RENESAS	获取价格	暂无描述
2SC4807ERTR	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4807ERTR-E	RENESAS	获取价格	Silicon NPN Epitaxial
2SC4807ERUL	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4807ERUR	HITACHI	获取价格	暂无描述
2SC4808	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
2SC4808J	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN, SC-89, SSMINI3-F1
2SC4808TX	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Sili